Components
HuaYi G042N10 N-Ch MOSFET 100V 160A TO-220
SKU · MOS-G042N10-N
In stock
Rs 650.00
no VAT
Absolute Maximum Ratings Pd ⓘ - Maximum Power Dissipation: 200 W
| Vds | ⓘ - Maximum Drain-Source Voltage: 100 V |
|---|
| Vgs | ⓘ - Maximum Gate-Source Voltage: 20 V |
|---|
| Id | ⓘ - Maximum Drain Current: 160 A |
|---|
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
| VGSth | ⓘ - Maximum Gate-Threshold Voltage: 4 V |
|---|
Qg ⓘ - Total Gate Charge: 119 nC
tr ⓘ - Rise Time: 97 nS
Cossⓘ - Output Capacitance: 2506 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO220
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// SPECIFICATIONS
Specs & details
| SKU | MOS-G042N10-N |
|---|---|
| Category | Components |
| Availability | In stock |
| Origin | Imported |
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